p - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 1 - m a y . , 2 0 0 6 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 2 3 1 7 a f e a t u r e s a p p l i c a t i o n s - 2 0 v / - 4 . 5 a , r d s ( o n ) = 2 8 m w ( t y p . ) @ v g s = - 4 . 5 v r d s ( o n ) = 3 8 m w ( t y p . ) @ v g s = - 2 . 5 v r d s ( o n ) = 5 5 m w ( t y p . ) @ v g s = - 1 . 8 v s u p e r h i g h d e n s e c e l l d e s i g n r e l i a b l e a n d r u g g e d l e a d f r e e a v a i l a b l e ( r o h s c o m p l i a n t ) p o w e r m a n a g e m e n t i n n o t e b o o k c o m p u t e r , p o r t a b l e e q u i p m e n t a n d b a t t e r y p o w e r e d s y s t e m s p i n d e s c r i p t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n p - c h a n n e l m o s f e t g s d apm2317 handling code temp. range package code package code a : sot-23 operating junction temp. range c : -55 to 150 c handling code tr : tape & reel lead free code l : lead free device blank : original device apm2317a : m17x xxxxx - date code lead free code t o p v i e w o f s o t - 2 3 n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e i n p l a t e t e r m i n a t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s a n d c o m p a t i b l e w i t h b o t h s n p b a n d l e a d - f r e e s o l d i e r i n g o p e r a t i o n s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 1 - m a y . , 2 0 0 6 w w w . a n p e c . c o m . t w 2 a p m 2 3 1 7 a a b s o l u t e m a x i m u m r a t i n g s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) n o t e : * s u r f a c e m o u n t e d o n 1 i n 2 p a d a r e a , t 1 0 s e c . symbol parameter rating unit v dss drain - source voltage - 20 v gss gate - source voltage 12 v i d * continuous drain current - 4 .5 i dm * 300 m s pulsed drain current v gs = - 4.5 v - 18 a i s * diode continuous forward current - 1 a t j maximum junction temperature 1 50 t stg storage temperature range - 55 to 150 c t a =25 c 0.83 p d * maximum power dissipation t a =100 c 0.3 w r q ja * thermal resistance - junction to ambient 150 c / w apm 23 17 a symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds = - 250 m a - 20 v v ds = - 16 v, v gs =0v - 1 i dss zero gate voltage drain current t j =85 c - 30 m a v gs(th) gate thre shold voltage v ds =v gs , i ds = - 250 m a - 0.5 - 0.7 - 1 v i gss gate leakage current v gs = 1 2 v, v ds =0v 100 na v gs = - 4.5 v, i ds = - 4.5 a 28 35 v gs = - 2 .5v, i ds = - 2.5 a 38 50 r ds(on) a drain - source on - state resistance v gs = - 1.8 v, i ds = - 2 a 55 75 m w v sd a diode forw ard voltage i sd = - 1 a, v gs =0v - 0. 7 - 1.3 v gate charge characteristics b q g total gate charge 14 20 q gs gate - source charge 2.1 q gd gate - drain charge v ds = - 10v, v gs = - 4.5v, i d s = - 4.5 a 4.7 nc
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 1 - m a y . , 2 0 0 6 w w w . a n p e c . c o m . t w 3 a p m 2 3 1 7 a e l e c t r i c a l c h a r a c t e r i s t i c s ( c o n t . ) ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm23 17 a symbol parameter test condition min. typ. max. unit dynamic characteristics b r g gate r esistance v gs = 0 v,v ds =0v ,f=1mhz 7 w c iss input capacitance 1520 c oss output capacitance 225 c rss reverse transfer capacitance v gs =0v, v ds = - 1 0v, f requency =1.0mhz 165 pf t d(on) turn - on delay time 6 12 t r turn - on rise time 13 24 t d(off) turn - off delay time 86 156 t f turn - off fall time v dd = - 10v, r l = 1 0 w , i d s = - 1a, v gen = - 4.5 v , r g =6 w 42 77 ns t rr reverse recovery time 21 ns q rr reverse recovery charge i s d = - 4.5a , dl sd /d t = 100a/ s 9 nc notes: a : pulse test ; pulse width 3 00 m s, duty cycle 2%. b : guaranteed by design, not subject to production testing.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 1 - m a y . , 2 0 0 6 w w w . a n p e c . c o m . t w 4 a p m 2 3 1 7 a t y p i c a l c h a r a c t e r i s t i c s -i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a - v d s - d r a i n - s o u r c e v o l t a g e ( v ) t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) p o w e r d i s s i p a t i o n p tot - power (w) t j - j u n c t i o n t e m p e r a t u r e ( c ) -i d - drain current (a) normalized transient thermal resistance 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t a =25 o c 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 t a =25 o c,v g =-4.5v 0.01 0.1 1 10 100 0.01 0.1 1 10 50 rds(on) limit 1s t a =25 o c 10ms 300 m s 1ms 100ms dc 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 mounted on 1in 2 pad r q ja : 150 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 1 - m a y . , 2 0 0 6 w w w . a n p e c . c o m . t w 5 a p m 2 3 1 7 a r ds(on) - on - resistance ( m w ) d r a i n - s o u r c e o n r e s i s t a n c e - i d - d r a i n c u r r e n t ( a ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e normalized threshold voltage - v d s - d r a i n - s o u r c e v o l t a g e ( v ) -i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s - v g s - g a t e - s o u r c e v o l t a g e ( v ) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 70 80 i d = -4.5a -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i ds = -250 m a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14 16 18 -1.5v -2v v gs = -3, -4, -5, -6, -7, -8, -9, -10v 0 3 6 9 12 15 18 0 10 20 30 40 50 60 70 80 90 100 v gs =4.5v v gs =1.8v v gs =2.5v d r a i n - s o u r c e o n r e s i s t a n c e r ds(on) - on - resistance ( m w )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 1 - m a y . , 2 0 0 6 w w w . a n p e c . c o m . t w 6 a p m 2 3 1 7 a - v d s - d r a i n - s o u r c e v o l t a g e ( v ) d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) c - capacitance (pf) - v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d -i s - source current (a) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) -v gs - gate-source voltage (v) t y p i c a l c h a r a c t e r i s t i c s ( c o n t . ) -50 -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r on @t j =25 o c: 28m w v gs = -4.5v i ds = -4.5a 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 20 t j =25 o c t j =150 o c 0 4 8 12 16 20 0 300 600 900 1200 1500 1800 2100 frequency=1mhz crss coss ciss 0 2 4 6 8 10 12 14 16 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v ds = -10v i d = -4.5a
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 1 - m a y . , 2 0 0 6 w w w . a n p e c . c o m . t w 7 a p m 2 3 1 7 a p a c k a g i n g i n f o r m a t i o n s o t - 2 3 millimeters inches dim min. max. min. max. a 1.00 1.30 0.039 0.051 a1 0.00 0.10 0.000 0.004 b 0.35 0.51 0.014 0.020 c 0.10 0.25 0.004 0.010 d 2.70 3.10 0.106 0.122 e 1.40 1.80 0.055 0.071 e 1.90 /2. 1 bsc. 0.075/0.083 bsc. h 2.40 3.00 0.094 0.118 l 0.37 0.015 d e h e a a1 l c b 3 2 1
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 1 - m a y . , 2 0 0 6 w w w . a n p e c . c o m . t w 8 a p m 2 3 1 7 a terminal material solder - plated copper (solder material : 90/10 or 63/37 snpb) , 100%sn lead solderability meets eia specification rsi86 - 91, ansi/j - std - 002 category 3. t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 temperature time critical zone t l to t p r e f l o w c o n d i t i o n ( i r / c o n v e c t i o n o r v p r r e f l o w ) c l a s s i f i c a t i o n r e f l o w p r o f i l e s p h y s i c a l s p e c i f i c a t i o n s profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classificatioon temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/se cond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. notes: all temperatures refer to topside of the package .measured on the body surface.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 1 - m a y . , 2 0 0 6 w w w . a n p e c . c o m . t w 9 a p m 2 3 1 7 a test item method description solderability mil-std-883d-2003 245c,5 sec holt mil-std 883d-1005.7 1000 hrs bias @ 125c pct jesd-22-b, a102 168 hrs, 100% rh, 121c tst mil-std 883d-1011.9 -65c ~ 150c, 200 cycles c a r r i e r t a p e & r e e l d i m e n s i o n s t ao e w po p ko bo d1 d f p1 r e l i a b i l i t y t e s t p r o g r a m table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb entectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c c l a s s i f i c a t i o n r e f l o w p r o f i l e s ( c o n t . )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . b . 1 - m a y . , 2 0 0 6 w w w . a n p e c . c o m . t w 1 0 a p m 2 3 1 7 a application a b c j t1 t2 w p e 178 1 60 1.0 12.0 2.5 0.15 9.0 0.5 1.4 8.0+ 0.3 - 0.3 4.0 1.75 f d d1 po p1 ao bo ko t sot-23 3.5 0.05 1.5 +0.1 p 0.1min 4.0 2.0 0.05 3.1 3.0 1.3 0.2 0.03 ( mm) c u s t o m e r s e r v i c e c o v e r t a p e d i m e n s i o n s c a r r i e r t a p e & r e e l d i m e n s i o n s a j b t2 t1 c application carrier width cover tape width devices per reel sot- 23 8 5.3 3000 anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 7f, no. 137, lane 235, pac chiao rd., hsin tien city, taipei hsien, taiwan, r. o. c. tel : 886-2-89191368 fax : 886-2-89191369
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